发明名称 METHOD AND DEVICE FOR VACUUM FILM-FORMATION
摘要 PROBLEM TO BE SOLVED: To provide a method and device suppressing effect of abnormal discharge on the thickness of a formed film, in a vacuum film-forming method, in which plasma discharge is generated by a high voltage energy source of the processing device on the surface of a belt-like object to be formed with a film, and a thin film is vapor-deposited by flowing, on the surface of this object, a gaseous starting material for the thin film formation. SOLUTION: Depending on the presence or absence of abnormal discharge detected by an abnormal discharge detector 11, the processing conditions to be inputted in their controller 12 are switched to those under abnormal or normal time by a switching device 13.
申请公布号 JP2002146543(A) 申请公布日期 2002.05.22
申请号 JP20000341507 申请日期 2000.11.09
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKAMOTO TAMAO
分类号 B01J19/00;B01J19/08;C23C16/52;G11B5/84;(IPC1-7):C23C16/52 主分类号 B01J19/00
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