| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for forming wiring of a base material, a method for obtaining by sputtering a sound wiring structure that is free of defects inside minute recesses for forming the wiring of the base material. SOLUTION: This is a wiring forming method for a base material by bipolar DC magnetron sputtering, in which a target 4 consisting of the base material 2 and an electrically conductive material is oppositely arranged in a chamber, with a high voltage applied between the base material 2 and the target 4, that a sputtering gas such as argon gas or the like introduced into the chamber 1 is ionized to become accelerated high energy particles, colliding with the target 4, covering or filling the minute recesses formed in the base material 2 by means of the popped out particles of the electrically conductive material. In carrying out the process of covering or filling the minute recesses formed on the surface of the base material 2, the pressure inside the chamber 1 is set at 1.69×10-2 to 1.35×10-1 Pa or below (the upper limit varies depending on a distance between the base material and the target), while the potential difference between the base material and the target is set at a value in the range of 0.6-10 kV.
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