发明名称 |
Aluminim nitride thin film substrate and process for producing same |
摘要 |
<p>An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond; an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and a process for producing these aluminum nitride film substrate. <IMAGE></p> |
申请公布号 |
EP0669412(B1) |
申请公布日期 |
2002.05.22 |
申请号 |
EP19950102701 |
申请日期 |
1995.02.24 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UTUMI, YOSHIHARU;IMAI, TAKAHIRO;FUJIMORI, NAOJI |
分类号 |
C30B23/02;C30B25/02;(IPC1-7):C30B25/02;C30B25/18 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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