发明名称 Aluminim nitride thin film substrate and process for producing same
摘要 <p>An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond; an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and a process for producing these aluminum nitride film substrate. <IMAGE></p>
申请公布号 EP0669412(B1) 申请公布日期 2002.05.22
申请号 EP19950102701 申请日期 1995.02.24
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 UTUMI, YOSHIHARU;IMAI, TAKAHIRO;FUJIMORI, NAOJI
分类号 C30B23/02;C30B25/02;(IPC1-7):C30B25/02;C30B25/18 主分类号 C30B23/02
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