| 摘要 |
PURPOSE: An electrostatic discharge(ESD) protection circuit is provided to prevent a chip from malfunctioning, by controlling the number of diodes of a diode stack part so that a holding region is located in a position higher than a VDD. CONSTITUTION: A silicon controlled rectifier(SCR) varies a trigger voltage according to an applied gate voltage, connected between an IC pad and an inner circuit. The diode stack part(2) transfers the voltage of the holding region of the SCR to a position higher than the VDD, connected in series with the SCR. A gate control unit(3) controls the gate voltage of the SCR.
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