METHOD OF VERTICAL TYPE THIN FILM TRANSISTOR FABRICATING LIQUID CRYSTAL DISPLAY

摘要

PURPOSE: A method of vertical type thin film transistor liquid crystal display is provided to reduce the number of fabrication steps employing masks by using a half tone mask. CONSTITUTION: An ITO film and a metal film for forming a source electrode are sequentially deposited on a glass substrate(20). The first and second photoresist patterns are simultaneously formed on the metal film in such a manner that the first and second patterns respectively define a pixel region and a source electrode region. The second photoresist pattern is thicker than the first photoresist pattern. The metal film and ITO film are etched using the first photoresist pattern as an etch barrier, to form the pixel region. The first pattern is removed and the metal film is etched using the second photoresist pattern as an etch barrier, to form the source electrode. An ohmic contact layer and a drain electrode are simultaneously formed on the source electrode. A channel layer(26) and an insulating layer(27) are simultaneously formed on a predetermined portion of the drain electrode and pixel region. A gate electrode(28) is formed on the insulating layer.