Method of manufacturing semiconductor device by sputtering dielectric forming materials while selectively heating growing layer

摘要

A method of manufacturing a semiconductor device, comprises the following steps of growing a dielectric film made of a dielectric material whose dielectric constant is improved by crystallization thereof, on a semiconductor substrate to utilize the dielectric film as a capacitor film, and applying a voltage to the semiconductor substrate in a plasma atmosphere to increase a grown interface temperature by "dielectric heating" upon growth of the dielectric film