发明名称 |
Method of fabricating a non-SOI device on an SOI starting wafer and thinning the same |
摘要 |
A method of thinning a non-SOI device using an SOI thinning process that includes the steps of receiving an SOI starting wafer, where the SOI starting wafer includes a silicon substrate and an oxide layer thereon; selecting a non-SOI fabrication process for fabricating the non-SOI device; forming a layer of device quality silicon on the oxide layer of the SOI starting wafer to a sufficient thickness and doping profile to realize the non-SOI device; fabricating the non-SOI device in the device quality silicon layer using the non-SOI fabrication process selected; forming a support layer on the device quality silicon layer having the non-SOI device fabricated therein; and thinning the result of the last step using the SOI thinning process.
|
申请公布号 |
US6391744(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US19970820200 |
申请日期 |
1997.03.19 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE NATIONAL SECURITY AGENCY |
发明人 |
HUDAK JOHN J.;NEAL THOMAS R.;KARULKAR PRAMOD CHINTAMAN |
分类号 |
H01L21/762;(IPC1-7):H01L21/46;H01L21/30 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|