发明名称 Focused ion beam forming method
摘要 A pattern film forming method comprises the steps of introducing a film forming gas on a sample, scanning a focused ion beam over a preselected area of the sample to form a pattern film on the sample, and reducing the scanning area of the focused ion beam while forming the pattern film on the sample.
申请公布号 US6392230(B1) 申请公布日期 2002.05.21
申请号 US19990286050 申请日期 1999.04.05
申请人 SEIKO INSTRUMENTS INC. 发明人 AITA KAZUO
分类号 G03F1/08;G03F1/72;G03F1/74;H01J37/317;H01L21/027;H01L21/205;H01L21/3205;H01L21/768;(IPC1-7):H01J37/244;G01N23/00;F26B21/00;F26B3/00;F26B19/00 主分类号 G03F1/08
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