| 发明名称 |
Process for forming gate conductors |
| 摘要 |
An ultra-large-scale integrated (ULSI) circuit includes MOSFETs. The MOSFETs can include a gate structure manufactured by utilizing a spacer structure as a mask. The spacer structure can be silicon dioxide formed in an etch back process.
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| 申请公布号 |
US6391753(B1) |
申请公布日期 |
2002.05.21 |
| 申请号 |
US20000597624 |
申请日期 |
2000.06.20 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN |
| 分类号 |
H01L21/033;H01L21/28;H01L21/3213;H01L21/4763;H01L21/768;H01L21/8234;H01L21/8238;H01L21/84;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/033 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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