发明名称 |
Shallow trench isolation formation to eliminate poly stringer with controlled step height and corner rounding |
摘要 |
A method of fabricating an integrated circuit including multiple devices and isolation structures separating the multiple devices includes depositing a mask layer with a first thickness above a semiconductor substrate, forming an aperture in the mask, and trimming the mask layer to a second thickness where the second thickness is less than the first thickness.
|
申请公布号 |
US6391729(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000521342 |
申请日期 |
2000.03.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUI ANGELA |
分类号 |
H01L21/762;(IPC1-7):H01L21/336;H01L21/16 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|