发明名称 Shallow trench isolation formation to eliminate poly stringer with controlled step height and corner rounding
摘要 A method of fabricating an integrated circuit including multiple devices and isolation structures separating the multiple devices includes depositing a mask layer with a first thickness above a semiconductor substrate, forming an aperture in the mask, and trimming the mask layer to a second thickness where the second thickness is less than the first thickness.
申请公布号 US6391729(B1) 申请公布日期 2002.05.21
申请号 US20000521342 申请日期 2000.03.09
申请人 ADVANCED MICRO DEVICES, INC. 发明人 HUI ANGELA
分类号 H01L21/762;(IPC1-7):H01L21/336;H01L21/16 主分类号 H01L21/762
代理机构 代理人
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