发明名称 |
Method of making SiC single crystal and apparatus for making SiC single crystal |
摘要 |
An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.
|
申请公布号 |
US6391109(B2) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000750157 |
申请日期 |
2000.12.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;NISHINO SHIGEHIRO |
发明人 |
SHIOMI HIROMU;NISHINO SHIGEHIRO |
分类号 |
C30B23/00;(IPC1-7):C30B35/00 |
主分类号 |
C30B23/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|