发明名称 High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers
摘要 A high-precision biasing circuit is provided for a CMOS cascode stage with inductive load and degeneration. The cascode stage includes at least two MOS transistors serially connected between a first voltage reference and a second voltage reference. The biasing circuit includes at least a first MOS replica transistor and a second MOS replica transistor, and two current generators for biasing the first and second MOS replica transistors. A circuit block detects a voltage value on a terminal of the second replica MOS transistor and applies a voltage to a gate terminal of the first replica transistor. Two circuit block implementations include a voltage amplifier and a folded cascode amplifier closed in a shunt feedback. Both implementations allow the threshold voltages of the cascode stage transistors to be tracked, as well as their Early and body effects.
申请公布号 US6392490(B1) 申请公布日期 2002.05.21
申请号 US20000650022 申请日期 2000.08.28
申请人 STMICROELETRONICS S.R.L. 发明人 GRAMEGNA GIUSEPPE;D'AQUILA ALESSANDRO;MARLETTA B. MARCO
分类号 G05F3/20;H03F1/22;H03F1/30;H03F3/45;(IPC1-7):H03F1/22 主分类号 G05F3/20
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