发明名称 |
High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers |
摘要 |
A high-precision biasing circuit is provided for a CMOS cascode stage with inductive load and degeneration. The cascode stage includes at least two MOS transistors serially connected between a first voltage reference and a second voltage reference. The biasing circuit includes at least a first MOS replica transistor and a second MOS replica transistor, and two current generators for biasing the first and second MOS replica transistors. A circuit block detects a voltage value on a terminal of the second replica MOS transistor and applies a voltage to a gate terminal of the first replica transistor. Two circuit block implementations include a voltage amplifier and a folded cascode amplifier closed in a shunt feedback. Both implementations allow the threshold voltages of the cascode stage transistors to be tracked, as well as their Early and body effects.
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申请公布号 |
US6392490(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000650022 |
申请日期 |
2000.08.28 |
申请人 |
STMICROELETRONICS S.R.L. |
发明人 |
GRAMEGNA GIUSEPPE;D'AQUILA ALESSANDRO;MARLETTA B. MARCO |
分类号 |
G05F3/20;H03F1/22;H03F1/30;H03F3/45;(IPC1-7):H03F1/22 |
主分类号 |
G05F3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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