| 摘要 |
A method for forming a plug or damascene trench on a semiconductor device includes the following steps: depositing a dielectric layer consisting of hydrogen silsesquioxane (HSQ) on the semiconductor device, depositing a mask layer consisting of a hard mask material on the dielectric layer, removing a portion of the mask layer and defining the remaining portion of the mask layer as a hard mask, curing the portion of the dielectric layer not covered with the hard mask by e-beam; removing the portion of the dielectric layer not being cured by e-beam with a wet etch process to create an opening in the dielectric layer, wherein the wet etch rate of the portion of the dielectric layer being e-beam cured is significantly lower than that of the portion of the dielectric layer not being e-beam cured, and filling the opening in the dielectric layer with a kind of metal material or polysilicon.
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