| 摘要 |
A fabrication process of a semiconductor device can bury Cu within a wiring groove and a grain is large. A fabrication process of a semiconductor device, in which wiring is formed on the semiconductor substrate, includes a first step of depositing a first conductive film on the substrate via an insulation film, a second step, subsequent to the first step, of depositing a second conductive film having film thickness thicker than the film thickness of the first conductive film, on the first conductive film, a third step following the second step, of performing heat treatment at least for the first and second conductive films, and a fourth step following the third step, of forming wiring by shaping the conductive films after the heat treatment.
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