发明名称 |
Method of fabricating local interconnect |
摘要 |
A method of forming a local interconnect is provided. A semiconductor is provided. An isolation structure, a transistor and a conductive layer are formed on the substrate. A dielectric layer with an opening is formed over the substrate. A part of the dielectric layer is removed by a photolithography and etching process to form a via opening to expose a part of the gate of the transistor or a part of the conductive layer. A conformal barrier layer is formed in the via opening and overflows the dielectric layer. A conductive plug is formed in the via opening. The barrier layer is patterned to form a local interconnect.
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申请公布号 |
US6391760(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US19980208734 |
申请日期 |
1998.12.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HSUE C. C.;CHEN WEI-CHUNG |
分类号 |
H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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