摘要 |
A dry etching is carried out for a single semiconductor wafer electrostatically attracted to a static chuck in the presence of a plasma, wherein a controlling system applies a relatively large direct current voltage to the static chuck when a lapse of time from the previous dry etching is longer than a critical lapse of time and when a place occupied by the single semiconductor wafer in a lot is equal to or less than a critical place so that micro-contact holes formed over the semiconductor wafers in the lot are fallen within a target diameter range.
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