Metal gate with PVD amorphous silicon layer for CMOS devices and method of making with a replacement gate process

摘要

A semiconductor structure and method for making the same provides a metal gate on a silicon substrate. The gate includes a high dielectric constant on the substrate, and a physical vapor deposited (PVD) layer of amorphous silicon on the high k gate dielectric. The metal is then formed on the PVD amorphous silicon layer. The work function of the metal gate is substantially the same as a polysilicon gate due to the presence of the PVD amorphous silicon layer.