Compound semiconductor device having low-resistive ohmic contact electrode and process for producing ohmic electrode

摘要

An indium layer sandwiched between palladium layers are treated with heat so that the indium is diffused into a p-type gallium arsenide, and is alloyed with the palladium, whereby the p-type indium gallium arsenide layer decreases a Schottky barrier between the p-type gallium arsenide and the palladium-indium alloy layer.