发明名称 High-temperature and high-pressure treatment device
摘要 To provide a high-temperature and high-pressure treatment device in which articles to be treated such as wafers of LSI semiconductors can be transported in a stable attitude, and the entire apparatus is made compact.A high-temperature and high-pressure treatment device in which articles to be treated 16 are arranged within a pressure vessel 13, and said pressure vessel 3 is interiorly placed in an atmosphere of high-temperature and high-pressure gases to treat the articles be treated 16 under the high-temperature and high-pressure, the treatment device comprising: a module for carrying articles to be treated 21 for carrying the articles to be treated 16 in and out of a pressure vessel, and a press frame module 20 for holding the pressure vessel 3 in an axial direction of vessel when the articles to be treated 16 are subjected to high-temperature and high-pressure treatment in the pressure vessel 3 closed by top and bottom closures 2, 4, wherein the module for carrying articles to be treated 21 and the press frame module 20 are connected and fixed so that both the modules 20, 21 can be reciprocated integrally.
申请公布号 US6390811(B1) 申请公布日期 2002.05.21
申请号 US20000721646 申请日期 2000.11.27
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) 发明人 MASUDA TSUNEHARU;ISHII TAKAHIKO;NARUKAWA YUTAKA
分类号 H01L21/677;C21D1/00;H01L21/00;H01L21/324;(IPC1-7):F27D3/00 主分类号 H01L21/677
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