发明名称 Structure equipped with electric contacts formed through said structure substrate
摘要 A stack including a micro-system having an electrical contact to connect the micro-system to the outside world, a substrate having a first layer formed on the substrate, a through hole extending in an axial direction of the substrate and configured to reveal a rear side of the first layer and to provide a passage to electrically connect to the electrical contact, and a cavity located at an end of the through hole close to the first layer, wherein the cavity has dimensions transverse to the axial direction larger than a diameter of the through hole and forms an overhanging edge around the through hole.
申请公布号 US6392158(B1) 申请公布日期 2002.05.21
申请号 US20000529411 申请日期 2000.08.08
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 CAPLET STéPHANE;DELAYE MARIE-THéRèSE
分类号 G01B7/00;G01L9/00;H01L21/768;H01L23/48;(IPC1-7):H05K1/03 主分类号 G01B7/00
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