发明名称 |
Structure equipped with electric contacts formed through said structure substrate |
摘要 |
A stack including a micro-system having an electrical contact to connect the micro-system to the outside world, a substrate having a first layer formed on the substrate, a through hole extending in an axial direction of the substrate and configured to reveal a rear side of the first layer and to provide a passage to electrically connect to the electrical contact, and a cavity located at an end of the through hole close to the first layer, wherein the cavity has dimensions transverse to the axial direction larger than a diameter of the through hole and forms an overhanging edge around the through hole.
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申请公布号 |
US6392158(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000529411 |
申请日期 |
2000.08.08 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
CAPLET STéPHANE;DELAYE MARIE-THéRèSE |
分类号 |
G01B7/00;G01L9/00;H01L21/768;H01L23/48;(IPC1-7):H05K1/03 |
主分类号 |
G01B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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