发明名称 |
Method of fabricating a polysilicon layer |
摘要 |
The present invention is directed to a method of forming a polysilicon layer. A light shield layer having a super-resolution near-field structure is arranged on an amorphous silicon layer. The super-resolution near-field structure includes a first dielectric layer, a second dielectric layer, and an active layer between the first dielectric layer and the second dielectric layer. The light shield layer is irradiated by a laser beam having a first intensity to generate a transmitted laser beam having a second intensity. The second intensity is greater than the first intensity. An annealing process is performed to irradiate the amorphous silicon layer with the transmitted laser beam having a second intensity thereby converting the amorphous silicon layer into a polysilicon layer.
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申请公布号 |
US6391395(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000695438 |
申请日期 |
2000.10.23 |
申请人 |
RITEK CORPORATION |
发明人 |
TSENG TZU-FENG;CHEN YI-MING;GUO WEN-REI |
分类号 |
G02F1/136;G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H05H1/02 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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