| 发明名称 |
Semiconductor device having a reduced leakage current and a fabrication process thereof |
| 摘要 |
A semiconductor device includes a nitride film between a gate electrode and an ohmic electrode contacting to a diffusion region adjacent to the gate electrode, at least on a side of the gate electrode facing the ohmic electrode.
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| 申请公布号 |
US6392310(B1) |
申请公布日期 |
2002.05.21 |
| 申请号 |
US19980014247 |
申请日期 |
1998.01.27 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
MATSUNAGA DAISUKE |
| 分类号 |
H01L21/318;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/088 |
主分类号 |
H01L21/318 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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