发明名称 |
Process for planarization a semiconductor substrate |
摘要 |
A process for forming a semiconductor wafer with a flat surface is disclosed. In the process, a bare semiconductor wafer that has been sawed from an ingot is provided. A layer of planarization material is formed on at least one major surface of the semiconductor wafer. The layer of planarization material is placed into contact with a respective object having a flat surface. Pressure is applied to cause the planarization material to flow and impart a planar, surface to the layer of planarization material. The planarization material is then hardened. The flat surface is separated from contact with the respective layer of hardened material. The surface flatness is then transferred into the underlying substrate surface.
|
申请公布号 |
US6391798(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000627084 |
申请日期 |
2000.07.27 |
申请人 |
AGERE SYSTEMS GUARDIAN CORP. |
发明人 |
DEFELICE RICHARD ALDEN;PRYBYLA JUDITH |
分类号 |
H01L21/3105;H01L21/312;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|