发明名称 |
Method of programming a flash memory cell |
摘要 |
There is disclosed a method of programming a flash memory cell, which is performed applying a given voltage a gate and a drain and maintaining a source and a substrate at a ground potential. The method variably applies a given voltage, with two or more steps, to one of the gate and drain terminals while applying a given voltage to the other of the gate and drain terminals, thus reducing the programming current per cell. Accordingly, the present invention can improve reliability and throughput of the flash memory cell.
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申请公布号 |
US6392929(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000721935 |
申请日期 |
2000.11.27 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM MIN KYU;PARK SHEUNG HEE;LEE JU YEAB;KIM TAE KYU |
分类号 |
G11C16/02;G11C16/12;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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