发明名称 Electron beam exposure apparatus and device manufacturing method
摘要 An electron optical system for controlling an electron beam to write a pattern detects the position of a stage reference mark on a stage using the electron beam, and a wafer stage position detection unit detects the position of the stage. Based on the detection results, the relative position between the electron beam and stage is specified, and pattern writing is controlled in accordance with this relative position. The electron optical system has an electron optical system reference mark. The electron optical system detects the position of this electron optical system reference mark at predetermined time intervals during pattern writing, and the relative position is corrected on the basis of a variation of that position.
申请公布号 US6392243(B1) 申请公布日期 2002.05.21
申请号 US19990359909 申请日期 1999.07.26
申请人 CANON KABUSHIKI KAISHA 发明人 MURAKI MASATO
分类号 G03F7/20;H01J37/147;H01J37/304;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01J37/304 主分类号 G03F7/20
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