METHOD OF MANUFACTURING FIELD EMISSION DEVICE

摘要

PURPOSE: A method of manufacturing a field emission device is provided to simplify the manufacturing process and realize a large screen. CONSTITUTION: A method of manufacturing an emitter tip of the field emission device including a silicon substrate(11) in which a conductive material is doped comprises a step of distributing a spacer masking a predetermined portion on the silicon substrate after mounting the silicon substrate on the chamber, forming a protrusion portion by isotropy etching the silicon substrate, eliminating the spacer to expose the protrusion portion, forming a first oxide film(14) and an emitter tip(12a) in triangle shape by a thermal oxidizing the silicon substrate including the protrusion portion, forming a second oxide film(15) on the first oxide film, forming a gate metal layer at the lateral of the second oxide film formed on the top of the emitter tip(12a), and etching the first oxide film and second oxide film so as to expose the emitter tip.