发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes the steps of: forming a transistor on a semiconductor substrate; forming a first interlayer insulating film over the entire structure including the transistor; planarizing the first interlayer insulating film; forming a stabilized insulating film consisting of an insulating material having low thermal expansion and shrinkage on the first interlayer insulating film; forming an interconnection line on the stabilized insulating film; forming a second interlayer insulating film on the stabilized insulating film to cover the interconnection line; and forming a metal electrode on the second interlayer insulating film in order to contact the semiconductor substrate. The interconnection line on the interlayer insulating film does not move as a result of the thermal treatment process, and thus does not cause shorts with the metal electrode. As a result, the leakage current is prevented and the electrical properties of the semiconductor is improved.
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申请公布号 |
US6391764(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000705704 |
申请日期 |
2000.11.06 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE SUNG KWON |
分类号 |
H01L23/522;H01L21/4763;H01L21/768;H01L21/82;(IPC1-7):H01L21/476 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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