发明名称 |
Method of manufacturing an FET with a second insulation layer covering angular portions of the activation layer |
摘要 |
The present invention aims to provide a field effect transistor which inhibits an aggregation of silicon atoms attendant on heat treatment and has stable source/drain shapes. The field effect transistor according to the present invention is manufactured using a substrate on which a silicon layer, an buried oxide film (BOX film) and an SOI layer are stacked in order. The field effect transistor has an element isolation layer formed in the SOI layer and further includes visored portions provided so as to cover angular portions on the main surface side of an activation layer defined by the element isolation layer.
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申请公布号 |
US6391692(B1) |
申请公布日期 |
2002.05.21 |
申请号 |
US20000628291 |
申请日期 |
2000.07.28 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD |
发明人 |
NAKAMURA TOSHIYUKI |
分类号 |
H01L21/336;H01L21/762;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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