| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to form the same devices even with plural different apparatus for production by forming a mask correction rule by taking the correlation of the fluctuation rate and correction rate of wafer sizes into consideration. SOLUTION: The dimensional fluctuation rate and the dependence of patterns on the coarseness and fineness are electrically measured by using an ACLV(across-the-chip linewise variation) with a wafer subjected to a total process and the dimensional fluctuation rate per side edge is determined on the wafer (steps S11a, S12a). A correction factor is acquired from the correlation value of a design size and finish size and the dependence of the correction factor on the coarseness and fineness of the patterns is acquired (steps S11b, S12b). Next, the dependence of the pattern on the coarseness and fineness are made coincident and the dimensional fluctuation rate per edge is divided by the correction factor described above (step S13). The result thereof is divided by the min. grid width of a mask plotting device and the (x) coordinate of the point riding on the grid of this mask plotting device is determined (step S14). The correction region for one grid, the correction region for two grids,... are determined in accordance with the (x) coordinate (step S15).</p> |
