METHOD FOR FORMING METAL WIRING IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal wiring in a semiconductor device is provided to be capable of improving gap-filling property in contact holes having different sizes without generating voids. CONSTITUTION: After forming an insulating layer(3) on a silicon substrate(1) having a junction region(2), a plurality of contact holes having different widths are formed. The first metal film(4) is formed in the contact holes, wherein the first metal film(4) is entirely filled into the contact hole of narrow width and a metal spacer(6) is formed at inner walls of the contact hole(7B) of wide width. The second metal film is entirely filled into the contact hole(7B) having wide width.