SEMICONDUCTOR DEVICE HAVING EXPANDED EFFECTIVE WIDTH OF ACTIVE REGION AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having an expanded effective width of an active region is provided to improve current driving force of a transistor having a small width of an active region by expanding the effective width of the active region so that the width of a channel is increased. CONSTITUTION: A semiconductor substrate(100) is prepared. The semiconductor substrate is selectively etched to form a trench(200). A part of the trench is filled with an isolation layer to expose the upper sidewall(205) of the trench. A gate insulation layer(700) is formed on the upper sidewall of the exposed trench and on the upper surface(105) of the semiconductor substrate adjacent to the trench. A gate electrode(800) is formed on the gate insulation layer.