| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To form a copper film that is buried in a good shape in a wiring trench and a connection hole by electrolytic plating. SOLUTION: A copper palladium alloy film 5 as a seed layer is formed in a wiring trench 2 and a connection hole 3, a copper film 6 that complements a function as the seed layer of the copper palladium alloy film 5 is formed on the copper palladium alloy film 5 by a nonelectrolytic plating, and then a cooper film 7 as a wiring is formed on the copper film 6 by an electrolytic plating. |
| 申请公布号 |
JP2002141305(A) |
申请公布日期 |
2002.05.17 |
| 申请号 |
JP20000336194 |
申请日期 |
2000.11.02 |
| 申请人 |
TOSHIBA CORP |
发明人 |
MATSUDA TETSURO;TOYODA HIROSHI;KANEKO HISAFUMI |
| 分类号 |
C23C18/16;C23C28/00;C25D5/34;C25D7/12;H01L21/288;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/288;H01L21/320 |
主分类号 |
C23C18/16 |
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