MANUFACTURING METHOD OF THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To obtain a thin-film transistor having improved performance and reliability by forming a high-quality gate insulating film and high-quality amorphous silicon without deteriorating the throughput. SOLUTION: Lamp light 50 is used, an insulating film 30 or a gate electrode 20 is selectively heated to form the insulating film 30, and an amorphous silicon film 70 is continuously formed, thus forming a high-quality insulating film and amorphous silicon film while the temperature in a substrate 10 is kept low, and hence obtaining the thin-film transistor having excellent reliability and performance without deteriorating the throughput.