| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a passivation film having a high radiation efficiency. SOLUTION: A passivation film 28 (protection film) is formed on an element forming layer 24, on which a circuit element 22 generating heat is formed via an insulating film 26 and conductor patterns 82, 84. The passivation film is an irregular film with a plurality of projections and depressions between the conductor patterns without depending on the shape of the surface under the passivation film. Accordingly, even when the insulating film 26 serving as an undercoat of the passivation film 28 is planar, the surface area of the passivation film 28 per unit projection area can be made large. Furthermore, since the projections and depressions are formed, a current path can be made long and hence electrical resistance can be made large. Thus, leakage current can be reduced. Furthermore, since the radiation area of the passivation film 28 is made large, heat generated by the circuit element 22 is efficiently released outside via the passivation film 28.
|
