SIMULTANEOUS ON-SITE DEPOSITING OF SILICON IN DIFFUSION BARRIER MATERIAL HAVING IMPROVED WETTABILITY, BARRIER EFFICIENCY, AND DEVICE RELIABILITY

摘要

PROBLEM TO BE SOLVED: To provide a copper interconnection layer (110) having a barrier (106) made of transition metal-silicon-nitride. SOLUTION: Transition metal-nitride and silicon are deposited at the same time by reactive sputtering in an atmosphere containing silicon to form the barrier (106). Then, the copper layer (110) having good adhesive ability is deposited on the barrier (106) made of transition metal-silicon-nitride.