SIDE WALL PROCESS FOR IMPROVING FLASH MEMORY CELL PERFORMANCE

摘要

PROBLEM TO BE SOLVED: To provide a method of protecting the sides of laminated word lines during SAS etching to avoid the problem that the sides of the laminated word lines of flash memory cells are exposed during SAS etching and prevents an inter-polysilicon dielectric and a gate dielectric from being undercut to increase the data hold loss. SOLUTION: The method of manufacturing a flash memory having conductor lines (24) crossing a trench isolation structure (70) comprises forming nitride side walls (125) for protecting a laminate during an SAS etching process.