THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY UNIT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problem that a reduction in an area of an element is difficult though a reducing effect of a leakage current of a thin film transistor connected in series with a thin film transistor having a plurality of LDD structures is large. SOLUTION: The reduction in size of the element and a decrease in the leakage current are made compatible by connecting gate electrodes 15 of the plurality of thin film transistors therebetween only by a region 13b in which an impurity is implanted in a low concentration in a polycrystal semiconductor thin film used for an active layer.