发明名称 |
POSITIVE TYPE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition having enhanced resolving power and improved process admissibility such as margin for exposure and focal depth and less liable to cause development defects in lithography using a short-wavelength light source for exposure capable of ultra- microfabrication and a positive type chemical amplification resist. SOLUTION: The positive type resist composition contains a compounds which generates a sulfonic acid having an alkane moiety substituted by at least one fluorine atom when irradiated with active light and an acid decomposable resin having repeating units of formula (A) as a resin having a group which is decomposed by the action of the acid to increase the solubility of the resin in an alkali developing solution. |
申请公布号 |
JP2002139838(A) |
申请公布日期 |
2002.05.17 |
申请号 |
JP20000332802 |
申请日期 |
2000.10.31 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
KODAMA KUNIHIKO;NISHIYAMA FUMIYUKI |
分类号 |
G03F7/039;C08F12/24;C08K5/42;C08L25/18;C08L83/04;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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