发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition having enhanced resolving power and improved process admissibility such as margin for exposure and focal depth and less liable to cause development defects in lithography using a short-wavelength light source for exposure capable of ultra- microfabrication and a positive type chemical amplification resist. SOLUTION: The positive type resist composition contains a compounds which generates a sulfonic acid having an alkane moiety substituted by at least one fluorine atom when irradiated with active light and an acid decomposable resin having repeating units of formula (A) as a resin having a group which is decomposed by the action of the acid to increase the solubility of the resin in an alkali developing solution.
申请公布号 JP2002139838(A) 申请公布日期 2002.05.17
申请号 JP20000332802 申请日期 2000.10.31
申请人 FUJI PHOTO FILM CO LTD 发明人 KODAMA KUNIHIKO;NISHIYAMA FUMIYUKI
分类号 G03F7/039;C08F12/24;C08K5/42;C08L25/18;C08L83/04;G03F7/004;H01L21/027 主分类号 G03F7/039
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