| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a CMOS device that substantially eliminates increased transient speed diffusion in a dopant, and has an extremely shallow junction. SOLUTION: In the COMS device, the dopant is injected to a substrate 10 containing Si, a dope region 12 is formed, a metal layer 14 is formed on the substrate containing Si, the metal layer is heated to change into a metal silicide layer 16, the dope region is simultaneously activated, a vacancy formed by heating is joined to an interstitial atom formed by the process, and the transient diffusion in the dopant on the substrate containing Si is substantially eliminated.
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