| 摘要 |
PROBLEM TO BE SOLVED: To provide an etchant composition which can eliminate a side etching phenomenon, a phenomenon of the change with time and a residue generating phenomenon generated in etching for an ITO(indium tin oxide) film and defects in etching of thin films other than the ITO film. SOLUTION: The etchant composition is an aqueous solution containing 0.1-20 wt.% MHSO4 (M is K or Na or NH4) as the main component. The etchant is used by adjusting the concentration of MHSO4, the main component of the etchant, or by adding a supplementary additive for the purpose of adjusting the etch rate and various required characteristics for the etching. One or more additives selected from among KMnO4, H2O2, H2SO4, M2S2O8 (M is K or Na or NH4), MHSO5 (M is K or Na or NH4), HNO3, HClO4, NaClO4, HIO4, and KIO4 are used combinedly. The adequate amount of the additive is 0.1-30 wt.%.
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