METHOD FOR FORMING MASKING PATTERN FOR BLAST PROCESSING

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a masking pattern by which the fine masking pattern of high precision can be formed even when a photoresist film formed on a substrate surface has thickness of >15 μm. SOLUTION: The photoresist thick film formed on the substrate surface is exposed via a photomask and then is developed by a liquid developer injected from nozzle together with a compressed gas.