| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a reliable polymetal gate electrode comprising a high melting-point metal film. SOLUTION: There are at least provided a silicon substrate 1, a polymetal gate electrode comprising a laminating structure of a high melting-point metal film 5 and a polycrystal silicon film 3 which is provided on the silicon substrate 1 through a gate insulating film 2, and a damascene gate cap 11 provided on an upper surface 19 and a side surface 20 of the high melting-point metal film 5. The damascene gate cap 11 is of one body with no joint while its upper surface 21 and side surface 22 orthogonally and substantially cross each other. No oxidizing agent or the like enter the joint of the damascene gate cap 11 in a post oxidizing process of the polycrystal silicon film 3. Related to a gate SAC, the high melting-point metal film is prevented from exposure after contact hole RIE.
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