PHOTOELECTRIC CONVERSION DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance the quality of a photoelectric conversion layer deposited on a silicon thin film and to improve the performance of a photoelectric conversion device by controlling the spin density in this silicon thin film which is a seed layer formed by a plasma CVD method or the like. SOLUTION: A photoelectric conversion device is provided in a structure that a crystalline silicon thin film 3 which contains conductivity decision impurity atoms of a means concentration of 1×1018 to 1×1022 piece/cm3, a photoelectric conversion layer 4 and a semiconductor layer 5 of a conductivity reverse to that of the thin film 3 are provided on a substrate 1 by laminating the layers 3, 4 and 5 on the substrate 1 with electrodes 2 and 6 respectively connected to the thin film 3 and the layer 5. This device is characterized in that the spin density analyzed by an electron spin resonance method in the thin film 3 is 1×1018 piece/cm3 or lower.