SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device at a low cost by realizing a further low temperature process (350 deg.C or lower or preferably 300 deg.C or lower). SOLUTION: A method for manufacturing the semiconductor device comprises the steps of forming a semiconductor layer 103 having a crystal structure, then simultaneously adding a p-type impurity element and a hydrogen element to a part of the layer 103 having a crystalline by using an ion doping method to form an impurity region 107 (a region having an amorphous structure), then heat treating at 100 to 300 deg.C to form a low resistance and amorphous impurity region 108, as a source region or a drain region of a TFT as the amorphous region as it is.