CSP TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a CSP type semiconductor device and a manufacturing method thereof which hardly causes a Si chip to crack due to the temperature change when mounted on a board and relocates outer terminals on an electrode forming surface of a semiconductor chip. SOLUTION: The manufacturing method comprises the steps of: laminating one surface of a polyimide film 111 having a conductive thin layer 112 to be a feed layer on another surface to a terminal surface of a wafer 120; forming through-holes 115 through the film 111; forming an electroless plating layer 130 in the through-holes 115; forming an etch-resistive resist layer 140 having openings conformed with the wiring shape and the via shape; electroplating a wiring part 160 including vias; removing the plating layer 130 on other than wiring regions by etching; forming a protective layer 170 covering the wiring part including the vias with openings at outer terminal forming regions; forming bumps 180 on the outer terminal forming regions opened through the protective layer; and cutting the wafer into individual semiconductor devices.