| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting device having a TFT(thin film transistor) with a high driving capacity (on-current) and the reliability in a driving circuit, and a TFT reducing the off-current in a pixel part. SOLUTION: In manufacturing the TFT, after forming a TFT having an LDD(lightly doped drain) region, a part of a gate electrode is etched to form the TFT with a gate overlapped lightly doped(GOLD) region. This constitution makes it passible to form a TFT having functions required by the driving circuit and the pixel part respectively on the same substrate.
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