PATTERN FORMING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND PHOTOSENSITIVE COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a negative type pattern free of swelling and excellent in resolution while having a chemical structure transparent in the far UV region including 193 nm wavelength of ArF excimer laser beam and having high dry etching resistance. SOLUTION: A reaction in which part or the whole of a γ- or δ- acetoxycarboxylic acid structure is converted into a lactone structure by an acid catalyzed reaction is used.