| 摘要 |
PROBLEM TO BE SOLVED: To enable processing of a sensitive device without giving any damage and without using microloading with an increased yield and also achievement of etching of an oxygen contained layer provided on a layer not contained by oxygen with a high selectivity. SOLUTION: A processing chamber uses an antenna 30 which is driven by RF energy inductively coupled within the chamber. The antenna 30 generates a plasma of a high density and low energy to etch an oxygen-contained layer provided on a non-oxygen-contained layer within the chamber with a high selectivity. An auxiliary RF bias energy applied to a cathode 32 supporting a substrate controls a cathode sheath voltage, or controls an ON energy regardless of the density. A gaseous silicon or carbon source is passed through an etching gas containing fluorine. In addition to the etching, evaporating and a combination processing thereof, various magnetic and electrical processing techniques can be improved. |
