| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability in a level shit diode using a pn junction, and also to manufacture the level shift diode by a series of processes including the manufacturing process of a field-effect transistor such as an HEMT for a compound semiconductor device. SOLUTION: This compound semiconductor device has p-type, n-type, and cap layers 8, 9, and 10 that are laminated on a cap layer 6 of a semiconductor layer comprising a channel layer 3 for composing the field-effect transistor, a carrier supply layer 4, an etching stopper layer 5, and the cap layer 6 for composing the diode including pn hetero-junction. The compound semiconductor device formed by covering a p-InGaAs layer 8 where an n-InP layer 9 that is placed at a surface side in the semiconductor layer for generating the pn hetero-junction and is depleted exists at a substrate side.
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