摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for producing the device of proper quality, when producing the large area device, and to provide a liquid phase growing device used for the same. SOLUTION: The trap of a granular or needle-like solid material is arranged at the tip of a susceptor immersed in metal solution (indium solution). The floating solid material is fully removed, and a substrate is immersed in metal solution, and then a semiconductor thin film is grown on the substrate.</p> |